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Proceedings Paper

Gigantic splash of the weak optical radiation gain in intrinsic threshold photoconductive devices (photoresistors) on an increase in the concentration of recombination centers
Author(s): Vyacheslav A. Kholodnov
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Paper Abstract

Detailed theoretical analysis of the dependence of the weak optical radiation gain on the concentration of recombination centers in intrinsic impurity-type-recombination photoconductors with extracting current contacts is carried out. The model of a single recombination level is considered. It is shown that the carrier lifetimes and the gain may strongly non-monotonically depend on the concentration of recombination impurity atoms. The conditions under which these effects take place are determined, and the physical mechanisms responsible for it are found out. The formulae for the locations of the extrema of the considered dependences are obtained. It is shown that the gain splash value depends non-monotonically on the applied voltage at the cost of photoinduced space charge. The maximally possible photogain is evaluated.

Paper Details

Date Published: 10 June 1999
PDF: 18 pages
Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); doi: 10.1117/12.350890
Show Author Affiliations
Vyacheslav A. Kholodnov, ORION Research, Development, and Production Ctr. (Russia)


Published in SPIE Proceedings Vol. 3819:
International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev, Editor(s)

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