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Proceedings Paper

Mask error factor and critical dimension budgets for sub-half-micron CMOS processes
Author(s): Graham G. Arthur; Brian Martin
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Paper Abstract

The effect known as mask error factor is investigated using the optical lithography simulation tool PROLITH/2 with a well-tried and tuned set of simulation parameters. These investigations are extended to include the effect of pitch, linewidth, optical proximity correction, focus, lens aberrations, partial coherence, resist contrast, resist thickness and exposure. Through the use of focus-exposure matrices, process windows and manufacturing critical dimension budgets, the impact on reticle procurement specifications is also examined.

Paper Details

Date Published: 14 June 1999
PDF: 12 pages
Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); doi: 10.1117/12.350880
Show Author Affiliations
Graham G. Arthur, Rutherford Appleton Lab. (United Kingdom)
Brian Martin, Mitel Semiconductor (United Kingdom)


Published in SPIE Proceedings Vol. 3677:
Metrology, Inspection, and Process Control for Microlithography XIII
Bhanwar Singh, Editor(s)

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