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Proceedings Paper

High-resolution UV wavelength reticle contamination inspection
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Paper Abstract

A new reticle inspection system with laser UV imaging for contamination inspection has been developed to detect contamination defects on advanced reticles for DUV steppers and low k1 lithography. The extension to UV wavelength improves the resolution of the imaging optics while maintaining compatibility with current STARlight inspection algorithms, thus improving both sensitivity and minimum linewidth capability. This enables inspection of reticles for 4X lithography design rules at 0.18 micrometers , 0.15 micrometers and 0.13 micrometers . The system also is capable of inspecting Tri-Tone PSM and reticles with OPC assist bars.

Paper Details

Date Published: 14 June 1999
PDF: 7 pages
Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); doi: 10.1117/12.350872
Show Author Affiliations
Franklin D. Kalk, DuPont Photomasks, Inc. (United States)
William Waters Volk, KLA-Tencor Corp. (United States)
James N. Wiley, KLA-Tencor Corp. (United States)
Ed Hou, KLA-Tencor Corp. (United States)
Sterling G. Watson, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 3677:
Metrology, Inspection, and Process Control for Microlithography XIII
Bhanwar Singh, Editor(s)

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