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Proceedings Paper

Monte Carlo simulation of charging effects in linewidth metrology: II. On insulator substrate
Author(s): Yeong-Uk Ko; Myung-Sai Chung
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Paper Abstract

Charging effect have been investigated quantitatively using Monte Carlo simulation when the linewidth of PMMA insulator patterns on SiO2 insulator substrate is measured by scanning electron microscope. We set reference operating and shape conditions for array pattern and calculated the offset on linewidth metrology according to change of each condition. We have used 50 percent threshold algorithm for the edge determination and calculated the offsets in those conditions. And we compare with the result with the case of Si substrate and finally we discussed which facto is most sensitive in linewidth metrology.

Paper Details

Date Published: 14 June 1999
PDF: 11 pages
Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); doi: 10.1117/12.350851
Show Author Affiliations
Yeong-Uk Ko, Korea Research Institute of Standards and Science (Korea)
Myung-Sai Chung, Korea Research Institute of Standards and Science (South Korea)


Published in SPIE Proceedings Vol. 3677:
Metrology, Inspection, and Process Control for Microlithography XIII
Bhanwar Singh, Editor(s)

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