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Proceedings Paper

High-aspect-ratio depth determination using nondestructive AFM
Author(s): V.C. Jai Prakash; Mark E. Lagus; A. Meyyappan; Sylvain Muckenhirn
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Paper Abstract

ULSI processing for the manufacture of devices such as DRAMs involves fabrication of several high aspect ratio structures. The determination and control of depth of these structures is crucial for device performance. We report the utilization of Atomic Force Microscopy to characterize 0.2 micrometers ground rule products. Features with 2.1 micrometers depth and 0.2 micrometers top nominal top width dimensions can be consistently measured. TO accomplish this a recently developed Deep Trench scan mode is employed and used in conjunction with new Super Angle Tapered CD and Super Angle COne tips. New analysis algorithms are developed to extract eh data in a repeatable from width decreased sensitivity to changes in tip size, top shape, and sample.

Paper Details

Date Published: 14 June 1999
PDF: 8 pages
Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); doi: 10.1117/12.350814
Show Author Affiliations
V.C. Jai Prakash, Siemens Microelectronic Inc. (United States)
Mark E. Lagus, IBM Microelectronics Div. (United States)
A. Meyyappan, Veeco Instruments Inc. (United States)
Sylvain Muckenhirn, Veeco Instruments Inc. (United States)


Published in SPIE Proceedings Vol. 3677:
Metrology, Inspection, and Process Control for Microlithography XIII
Bhanwar Singh, Editor(s)

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