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Proceedings Paper

Quantification of wafer printability improvements with scanning steppers using new flatness metrics
Author(s): Yiorgos Kostoulas; Sahra Berman Tanikawa; David Kallus; Randal K. Goodall
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Paper Abstract

The prevailing models for wafer flatness provide simulation of contact lithography via global flatness parameters such as GBIR, GFLD and GFLR and step-and-repeat lithography. Steppers are modeled as either non-leveling, global leveling or site-by-site leveling. As device critical dimensions shrink and lithographic depth of field is tightened, optical lithography steppers move to new exposure methods. It is imperative, therefore the wafer geometry characterization follows suit in modeling the operation of the new generation steppers. In this work we examine the capabilities of four sets of 200 mm wafers - each from a different manufacturing process - to satisfy the emerging needs of the 180, 150 and 130 nm features. We use both full-site and scanning stepper metrics and our results show increased yield for scanner vs. full site exposure for the same flatness limit. In addition, we show that for full-site exposure, yield is reduced with increasing field length.

Paper Details

Date Published: 14 June 1999
PDF: 8 pages
Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); doi: 10.1117/12.350813
Show Author Affiliations
Yiorgos Kostoulas, ADE Corp. (United States)
Sahra Berman Tanikawa, ADE Corp. (United States)
David Kallus, ADE Corp. (United States)
Randal K. Goodall, International SEMATECH (United States)


Published in SPIE Proceedings Vol. 3677:
Metrology, Inspection, and Process Control for Microlithography XIII
Bhanwar Singh, Editor(s)

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