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Proceedings Paper

Wafer mapping for stepper effects characterization
Author(s): Yuan Zhang; Ronald A. Carpio; Lucian Wagner; Peter V. Golubtsov
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Paper Abstract

A simple technique is introduced to compare wafer flatness measured on a non-contact capacitative flatness gauge with flatness reported by a photolithography stepper. Because the capacitive gauge measures a wafer in a mechanically free state, the differences between the two types of wafer data maps represent the sets induced by the stepper. For wafers with large Total Thickness Variations (TTV), the effective stepper flatness comes close to the true metrology flatness. However, on ultra-flat wafers with very low TTVs, the stepper signature becomes more visible, which distorts the true flatness reading. Irregular wafer shape may also affect the flatness reading on the stepper due to imperfection of vacuum chucking.

Paper Details

Date Published: 14 June 1999
PDF: 5 pages
Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); doi: 10.1117/12.350812
Show Author Affiliations
Yuan Zhang, ADE Corp. (United States)
Ronald A. Carpio, SEMATECH (United States)
Lucian Wagner, ADE Corp. (United States)
Peter V. Golubtsov, ADE Corp. (Russia)


Published in SPIE Proceedings Vol. 3677:
Metrology, Inspection, and Process Control for Microlithography XIII
Bhanwar Singh, Editor(s)

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