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Proceedings Paper

Instrumentation of a deep-UV microscope resolving less than 0.15 um
Author(s): Katsumi Ogino; Jiro Mizuno; Atushi Takeuchi; Noboru Amemiya; Yasuo Yonezawa; Toshiaki Nihoshi; Hisao Osawa; Hiroshi Ooki
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Paper Abstract

Remarkable improvement in resolution when observing critical dimensions in semiconductor inspection by using a newly- developed deep-UV optical microscope is presented. At present, while scanning electron microscope (SEM) is the only imaging tool for less than 0.20-micron geometry, improvement in resolution of optical microscope has strongly been desired because of its easier operations and less damage including feature. Simulation of resolution to be achieve indicated that deep-UV wavelength only clearly resolve less than 0.15-micron geometry and images acquired at 266nm in the following experiment well agreed with the simulation. An objective lens especially for deep-UV, laser light source, illumination and imaging optics, and image detection device were built on a conventional microscope stand. This high-resolution microscope may extend the field of optical inspection and even open up new inspection applications.

Paper Details

Date Published: 14 June 1999
PDF: 8 pages
Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); doi: 10.1117/12.350803
Show Author Affiliations
Katsumi Ogino, Nikon Corp. (Japan)
Jiro Mizuno, Nikon Corp. (Japan)
Atushi Takeuchi, Nikon Corp. (Japan)
Noboru Amemiya, Nikon Corp. (Japan)
Yasuo Yonezawa, Nikon Corp. (Japan)
Toshiaki Nihoshi, Nikon Corp. (Japan)
Hisao Osawa, Nikon Corp. (Japan)
Hiroshi Ooki, Nikon Corp. (Japan)

Published in SPIE Proceedings Vol. 3677:
Metrology, Inspection, and Process Control for Microlithography XIII
Bhanwar Singh, Editor(s)

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