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Proceedings Paper

Improve the accuracy and sensitivity of CD-SEM linewidth measurement for deep-submicron polygate pattern transfer
Author(s): Xin Mei; Ming Hui Fan; Alex Tsun-Lung Cheng
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Paper Abstract

As the feature sizes continue to shrink, the requirements for precision and accuracy of CD-SEM metrology become more and more critical. For line width measurements, the uncertainty in edge position determination due to measurement algorithms is an important source of error in CD metrology. To improve the accuracy of CD-SEM system, an appropriate algorithm for a specified type of feature must be determined by comparison to a suitable reference tool. A good algorithm should also be sensitive to process variation and therefore characterize the process drift accurately. In this report we present a systematic method to optimize linear approximation for monitoring 0.25 micrometers polygate pattern linewidth measurement on Hitachi high resolution CD- SEM.

Paper Details

Date Published: 14 June 1999
PDF: 11 pages
Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); doi: 10.1117/12.350786
Show Author Affiliations
Xin Mei, Chartered Semiconductor Manufacturing Ltd. (United States)
Ming Hui Fan, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Alex Tsun-Lung Cheng, Chartered Semiconductor Manufacturing Ltd. (Singapore)


Published in SPIE Proceedings Vol. 3677:
Metrology, Inspection, and Process Control for Microlithography XIII
Bhanwar Singh, Editor(s)

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