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Proceedings Paper

Resist-profile-dependent photobias and in-line DICD control strategy
Author(s): Chung Yih Lee; Thian Teck Ong; Ma Wei Wen; Alex Tsun-Lung Cheng; Lin Yih Shung
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Paper Abstract

In-line DICD control is universally used in wafer fabs to ensure on-target FICD and to monitor process fluctuation. However, how to set up an optimal DICD target sometimes becomes ambiguous as the device dimension shrinks and various photo- and etch-bias begin to emerge. In this paper, we have investigated the root cause of photo-bias and found that for i-line resist with pattern dimension smaller than 0.45 micrometers , the so-called photo bias is largely caused by resist profile change. From resist cross section pictures we verify that the in-line DICD measurement usually deviates from the resist bottom CD and the deviation is resist profile dependent. Based on this understanding, we present an in-line DICD control strategy that is more efficient in terms of resist process characterization and requires no CD- SEM measurement algorithm change.

Paper Details

Date Published: 14 June 1999
PDF: 4 pages
Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); doi: 10.1117/12.350785
Show Author Affiliations
Chung Yih Lee, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Thian Teck Ong, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Ma Wei Wen, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Alex Tsun-Lung Cheng, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Lin Yih Shung, Chartered Semiconductor Manufacturing Ltd. (Singapore)

Published in SPIE Proceedings Vol. 3677:
Metrology, Inspection, and Process Control for Microlithography XIII
Bhanwar Singh, Editor(s)

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