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Proceedings Paper

Microchannel avalanche semiconductor photodetectors: status and perspectives
Author(s): Zynaddyn Ya. Sadygov; I. M. Zheleznykh; A. E. Luk'yanov; N. Bacchetta; D. Bisello; Alim K. Kaminsky
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Paper Abstract

A new metal-resistive layer-semiconductor avalanche photodiode for single photon detection was designed and produced. High efficiency of single photon registration at room temperature was achieved. These devices also show the possibility of recording short light pulses with front duration as low as 5 ps.

Paper Details

Date Published: 22 June 1999
PDF: 9 pages
Proc. SPIE 3516, 23rd International Congress on High-Speed Photography and Photonics, (22 June 1999); doi: 10.1117/12.350486
Show Author Affiliations
Zynaddyn Ya. Sadygov, Joint Institute for Nuclear Research (Russia)
I. M. Zheleznykh, Institute for Nuclear Research (Russia)
A. E. Luk'yanov, Moscow State Univ. (Russia)
N. Bacchetta, Instituto Nazionale di Fisica Nucleare (Italy)
D. Bisello, Instituto Nazionale di Fisica Nucleare (Italy)
Alim K. Kaminsky, Instituto Nazionale di Fisica Nucleare (Italy)


Published in SPIE Proceedings Vol. 3516:
23rd International Congress on High-Speed Photography and Photonics
Valentina P. Degtyareva; Mikhail A. Monastyrski; Mikhail Ya. Schelev; Alexander V. Smirnov, Editor(s)

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