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Proceedings Paper

Chemical and processing aspects of thin imaging layers
Author(s): Wendy F.J. Gehoel-van Ansem; Frank T.G.M. Linskens; Vinh Phuc Pham
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Paper Abstract

In this paper, commercially available DUV resist for 'thick' resist applications were used to study the chemical and processing aspects of thin imaging layers. Two types of resist were used: a high Rmin resist and a low Rmin resist, both from Shipley. Input parameters were process conditions such as soft bake, post-exposure bake and development time. Also the influence of the resist thickness was taken into account. Output parameters are contrast, profiles and process windows. The most important parameters for optimizing thin imaging layers are Rmin and the post- exposure bake.

Paper Details

Date Published: 11 June 1999
PDF: 12 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350272
Show Author Affiliations
Wendy F.J. Gehoel-van Ansem, Philips Research Labs. (Netherlands)
Frank T.G.M. Linskens, Shipley Europe Ltd. (Netherlands)
Vinh Phuc Pham, ASM Lithography (Canada)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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