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Proceedings Paper

Process margin in ArF lithography considering process window distortion
Author(s): Ichiro Okabe; Takeshi Ohfuji; Masayuki Endo; Hiroaki Morimoto
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Paper Abstract

It is generally known that a highly transparent ArF resists is preferable for the bottom ARC process to maintain the vertical sidewall of resist patterns. Therefore we developed some transparent resists with a low concentration of photo acid generator. However, our careful analysis clarified that the completely transparent resist caused a serious deterioration of the exposure-defocus (E-D) process window. Therefore, there should be an optimum transparency in the ArF resists. Our experiment clarified that the medium transparency resists had the largest E-D process window. This resist produced 120 nm nested lines using an ArF stepper without any resolution enhancement technique.

Paper Details

Date Published: 11 June 1999
PDF: 9 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350271
Show Author Affiliations
Ichiro Okabe, Semiconductor Leading Edge Technology, Inc. (Japan)
Takeshi Ohfuji, Semiconductor Leading Edge Technology, Inc. (Japan)
Masayuki Endo, Semiconductor Leading Edge Technology, Inc. (Japan)
Hiroaki Morimoto, Semiconductor Leading Edge Technology, Inc. (Japan)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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