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Proceedings Paper

Impact of photoacid generator structure on DUV resist performance
Author(s): James F. Cameron; Sheri L. Ablaza; Guangyu Xu; Wang Yueh
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Paper Abstract

The structural influence of photoacid generators on DUV resists performance is investigated in both high and low activation energy resists system. The lithographic behaviors of the photoacid generator is considered in terms of the structure of the photogenerated acid and the light sensitive chromophore. First, the lithographic impact of the photogenerated acid is investigated in terms of acid strength and acid size in resists optimized for high and low temperature processing, respectively. Dissolution kinetics, contrast curve data and absorbance data are presented for a series of high and low activation energy resists in which the structure of the photogenerated acid is systematically varied. The results of these studies are discussed in terms of the photogenerated acid, emphasizing the impact of acid strength and size on lithographic performance and resists dissolution rate kinetics for each resists platform. Secondly, the structural influence of the light sensitive PAG chromophore is investigated by comparing the lithographic performance and dissolution rate kinetics are probed in terms of resist type and PAG structure.

Paper Details

Date Published: 11 June 1999
PDF: 15 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350268
Show Author Affiliations
James F. Cameron, Shipley Co. Inc. (United States)
Sheri L. Ablaza, Shipley Co. Inc. (United States)
Guangyu Xu, Shipley Co. Inc. (United States)
Wang Yueh, Shipley Co. Inc. (United States)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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