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Proceedings Paper

Approaches to etch-resistant 193-nm photoresists: performance and prospects
Author(s): Robert D. Allen; Juliann Opitz; Hiroshi Ito; Thomas I. Wallow; Daniel V. Casmier; Richard A. Di Pietro; Phillip J. Brock; Gregory Breyta; Ratnam Sooriyakumaran; Carl E. Larson; Donald C. Hofer; Pushkara Rao Varanasi; Ann Marie Mewherter; Saikumar Jayaraman; Richard Vicari; Larry F. Rhodes; Shenliang Sun
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Paper Abstract

We have investigated three substantially different routes to 193nm single layer resists. This paper will attempt to shed light on the strengths and weaknesses of each approach. Design principles, polymer synthesis and properties, and resist properties will be discussed for the three main branches of 193nm resists.

Paper Details

Date Published: 11 June 1999
PDF: 12 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350262
Show Author Affiliations
Robert D. Allen, IBM Almaden Research Ctr. (United States)
Juliann Opitz, IBM Almaden Research Ctr. (United States)
Hiroshi Ito, IBM Almaden Research Ctr. (United States)
Thomas I. Wallow, IBM Almaden Research Ctr. (United States)
Daniel V. Casmier, IBM Almaden Research Ctr. (United States)
Richard A. Di Pietro, IBM Almaden Research Ctr. (United States)
Phillip J. Brock, IBM Almaden Research Ctr. (United States)
Gregory Breyta, IBM Almaden Research Ctr. (United States)
Ratnam Sooriyakumaran, IBM Almaden Research Ctr. (United States)
Carl E. Larson, IBM Almaden Research Ctr. (United States)
Donald C. Hofer, IBM Almaden Research Ctr. (United States)
Pushkara Rao Varanasi, IBM Microelectronics Div. (United States)
Ann Marie Mewherter, IBM Microelectronics Div. (United States)
Saikumar Jayaraman, BFGoodrich (United States)
Richard Vicari, BFGoodrich (United States)
Larry F. Rhodes, BFGoodrich (United States)
Shenliang Sun, BFGoodrich (United States)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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