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Proceedings Paper

Theoretical analysis of line-edge roughness using FFT techniques
Author(s): Takeshi Ohfuji; Masayuki Endo; Hiroaki Morimoto
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Paper Abstract

Although the line-edge roughness of resist patterns is becoming a serious problem as the size of resist patterns are decreased, quantitative analysis has rarely been seen so far. We investigate the line-edge roughness of ArF resist patterns using the FFT method. We found that all the observed line-edge roughness had a specific FFT spectrum shape composed of a flat area at low frequency and a 1 (root) f component area at high frequency. The amount of line-edge roughness is independent of dose and linewidth but has a strong dependence on defocus. The patterns formed using TSI also have similar FFT spectrum shapes. Based on these findings, we proposed a line-edge roughness simulation method that achieves the observed FFT spectrum.

Paper Details

Date Published: 11 June 1999
PDF: 7 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350261
Show Author Affiliations
Takeshi Ohfuji, Semiconductor Leading Edge Technologies, Inc. (Japan)
Masayuki Endo, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroaki Morimoto, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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