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Proceedings Paper

Line-edge roughness characterized by polymer aggregates in photoresists
Author(s): Toru Yamaguchi; Hideo Namatsu; Masao Nagase; Kenji Kurihara; Yoshio Kawai
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Paper Abstract

We investigate the origin of the line-edge roughness (LER) of line patterns of chemically amplified photo resist for the purpose of reducing size fluctuations of patterns in present and future deep-UV lithography. An atomic force microscope analysis of the pattern sidewall reveals that there are tow kinds of roughness in the LER: short-range roughness with an average period of about 50 nm and long- range roughness with an average period of about 500 nm. The short-range roughness can be identified as polymer aggregates, which are essentially formed by the base polymer in the resist film. This is because the average period of the surface roughness due to polymer aggregates observed in the base polymer films is about the same as that of the short-range roughness. In addition, it is confirmed that aggregate extraction development occurs in the photoresist. On the other hand, the long-range roughness is generated not by the base polymer only but also by the exposure process because its average period increases with the exposure dose. The origin of the long-range roughness is also discussed.

Paper Details

Date Published: 11 June 1999
PDF: 8 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350246
Show Author Affiliations
Toru Yamaguchi, NTT Basic Research Labs. (Japan)
Hideo Namatsu, NTT Basic Research Labs. (Japan)
Masao Nagase, NTT Basic Research Labs. (Japan)
Kenji Kurihara, NTT Basic Research Labs. (Japan)
Yoshio Kawai, NTT System Electronics Labs. (Japan)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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