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Proceedings Paper

Chemical aspects of silicon-containing bilayer resists
Author(s): Larry D. Boardman; Carl R. Kessel; Steven J. Rhyner
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Paper Abstract

We have prepare several novel silicon-containing polymers containing both low Ea and high Ea protecting groups, and we have evaluated these materials at both 193 nm. Low Ea acetal-containing polymers were prepared by reacting poly(4-vinylphenol) with novel silyl enol ethers. The ease of protecting group cleavage in these materials is manifested in the immediate formation of a strong latent image after exposure. High Ea polymers were prepared by introducing tertiary esters which contain the tris(trimethylsilyl)silyl group, and both methacrylate copolymers and norbornene-maleic anhydride copolymers containing this group have been synthesized. Both of these materials show good oxygen plasma etch resistance, with the latter demonstrating superior adhesion to poly(4- vinylphenol) planarizing layers. The tris(trimethylsilyl)silyl group imparts a high degree of hydrophobicity to coatings of many of these materials. Acid- catalyzed deprotection of these tertiary esters affords the corresponding carboxylic acids and 1-silyl-3-methylbutenes, and the liberation of these olefins is significantly faster than the loss of isobutylene from the tert-butyl analogs.

Paper Details

Date Published: 11 June 1999
PDF: 11 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350239
Show Author Affiliations
Larry D. Boardman, 3M Co. (United States)
Carl R. Kessel, 3M Co. (United States)
Steven J. Rhyner, 3M Co. (United States)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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