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Proceedings Paper

Optimizing a DUV positive resist for metal layers
Author(s): Sanjay Malik; Brian Maxwell; Anna Gandolfi; Alberto Ornaghi; Allyn Whewell; Kenneth Uhnak; Stefano Volpi; Veerle Van Driessche; Thomas R. Sarubbi; Steven G. Hansen; Murrae J. Bowden
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Paper Abstract

Structurally modified acetal resist is designed for lithography on metal layers. The acetal-based polymer used in the resist has intrinsically low post-exposure volatilization and superior metal etch resistance. This resist is designed to have excellent substrate compatibility as indicated by a foot size of less than 10 nm for 250 nm feature size. Lithographic evaluations reveal that this resists is capable of resolving sub-200 nm features on TiN substrates with high photosensitivity, dose latitude and excellent process windows for line and post features. The reduced foot size and enhanced resolution could be achieved by optimizing the resist chemistry and the processing conditions.

Paper Details

Date Published: 11 June 1999
PDF: 9 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350235
Show Author Affiliations
Sanjay Malik, Arch Chemicals, Inc. (United States)
Brian Maxwell, Arch Chemicals, Inc. (United States)
Anna Gandolfi, STMicroelectronics (Italy)
Alberto Ornaghi, STMicroelectronics (Italy)
Allyn Whewell, Arch Chemicals, Inc. (United States)
Kenneth Uhnak, Arch Chemicals, Inc. (United States)
Stefano Volpi, Arch Chemicals, Inc. (Italy)
Veerle Van Driessche, Arch Chemicals, N.V. (Belgium)
Thomas R. Sarubbi, Arch Chemicals, Inc. (United States)
Steven G. Hansen, Arch Chemicals, Inc. (United States)
Murrae J. Bowden, Arch Chemicals, Inc. (United States)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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