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Proceedings Paper

Positive ArF resist with 2EAdMA/GBLMA resin system
Author(s): Yasunori Uetani; Hiroaki Fujishima; Kaoru Araki; Kazuhisa Endo; Ichiki Takemoto
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Paper Abstract

We compared 2MAdMA(2-Metyl-2- Adamantylmethacrylate)/GBLMA((gamma) -butyrolactone methacrylate) resin system and 2EAdMA(2-Etyl-2- Adamantylmethacrylate)/GBLMA resin system. 2EAdMA/GBLMA resin system showed higher sensitivity, dissolution contrast and better adhesion to silicon substrate than 2MAdMA/GBLMA resin system. These results shows that 2EAdMA/GBLMA resin system is suitable for practical ArF positive resist.

Paper Details

Date Published: 11 June 1999
PDF: 8 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350233
Show Author Affiliations
Yasunori Uetani, Sumitomo Chemical Co., Ltd. (Japan)
Hiroaki Fujishima, Sumitomo Chemical Co., Ltd. (Japan)
Kaoru Araki, Sumitomo Chemical Co., Ltd. (Japan)
Kazuhisa Endo, Sumitomo Chemical Co., Ltd. (Japan)
Ichiki Takemoto, Sumitomo Chemical Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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