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Proceedings Paper

Controlled developing time for higher-resolution i-line photoresist
Author(s): Yutaka Saito; Tatsuya Yamada; Kunio Itoh
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Paper Abstract

A kind of naphthoquinone diazide esters which has strong surface inhibition on exposed area has been found and is applied to non bulk effect and higher resolution i-line photoresist fabrication. Overall developing time, it consists of dissolution time of the surface inhibition layer and developing time of exposed photoresist under the surface inhibition layer and to control the dissolution time and the developing time results in non bulk effect photoresist fabrication, and where DRM, Development Rate Monitor, was used to analyze this phenomenon.

Paper Details

Date Published: 11 June 1999
PDF: 12 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350231
Show Author Affiliations
Yutaka Saito, Nagase Electronic Chemicals, Ltd. (Japan)
Tatsuya Yamada, Nagase Electronic Chemicals, Ltd. (Japan)
Kunio Itoh, Nagase Electronic Chemicals, Ltd. (Japan)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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