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Proceedings Paper

Photoresist silylation and "swelling": simulation using finite element analysis and physical boundary movement algorithms
Author(s): Arousian Arshak; Thomas J. Kinsella; Declan McDonagh
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Paper Abstract

In this work, a new resist silylation simulator called STIL has been developed. This simulator models the silylation process as a 1D Initial Boundary Value problem which is then solved using in-house developed Finite Element Analysis code. In this model, the silylating agent diffusion and reaction rates are recalculate dafter each silylating time- step, (delta) t. The swelling mechanism is modeled as a Boundary Movement problem whereby the swelling in each element is a function of the local silicon concentration in that element. By solution of this system across the exposed area, a 2D profile of the silicon concentration is determined over an exposed linewidth. the simulations from this model are compared to published experimental data.

Paper Details

Date Published: 11 June 1999
PDF: 11 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350229
Show Author Affiliations
Arousian Arshak, Univ. of Limerick (Ireland)
Thomas J. Kinsella, Intel Ireland Ltd. (Ireland)
Declan McDonagh, Integrated Devices Technology Inc. (United States)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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