Share Email Print

Proceedings Paper

Developer concentration influence on DUV process
Author(s): Tsu-Yu Chu; Kun-Pi Cheng
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Currently, TMAH 2.38 percent concentration developer is popular to run photo process form g-line, I-line to DUV. For next generation photo process, the PR thickness will be thinner, CD and PR profile control are more important, so developer process will be more critical. The influence of developer concentration on DUV process performance has been investigated in this paper. We have tested 5 samples of TMAH concentration developer from 1.6 percent to 2.38 percent with one kind of DUV photoresist. The data of 0.25 micrometers L/S and 0.3 micrometers hole of masking linearity, resolution, total exposure latitude, focus latitude, and resists profile have been collected and analyzed. The optimal concentration of developer is described. Besides, 10 DUV photoresist with optimal concentration developer are tested and compared with general developer. Some chemical structures of DUV photoresist are also discussed in this paper.

Paper Details

Date Published: 11 June 1999
PDF: 7 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350227
Show Author Affiliations
Tsu-Yu Chu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Kun-Pi Cheng, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

© SPIE. Terms of Use
Back to Top