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Proceedings Paper

Chemically amplified resist based on the methacrylate polymer with 2-trimethylsilyl-2-propyl ester protecting group
Author(s): Jin-Baek Kim; Hyun-Woo Kim; Si-Hyeung Lee; Sang-Jun Choi; Joo-Tae Moon
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Paper Abstract

Poly(2-trimethylsilyl-2-propyl methacrylate-co-(gamma) - butyrolactone-2-yl methacrylate) was synthesized and evaluated as a potential dry-developable chemically amplified photoresist. When the counterion of the photogenerated acid does not provide a fluoride ion, e.g., sulfonate, the carbonium ion undergoes elimination to produce 2,2,3-trimethyl-2-silabut-3-ene, and regenerates another acid. The deprotection of 2-trimethylsilyl-2-propyl group of the polymer takes place in the exposed region after post-exposure bake. The difference of silicon content between the unexposed and exposed regions is large enough to form patterns using oxygen reactive-ion etching. Poly(2- trimethylsilyl-2-propyl methacrylate-co-(gamma) - butyrolactone-2-yl methacrylate) was evaluated as a resists for ArF excimer laser lithography. 0.24 micrometers line/space patterns were obtained using the conventional developer with an ArF excimer laser stepper. 1 micrometers line/spacer patterns were obtained using dry development process with O2 reactive ion etching.

Paper Details

Date Published: 11 June 1999
PDF: 9 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350224
Show Author Affiliations
Jin-Baek Kim, Korea Advanced Institute of Science and Technology (South Korea)
Hyun-Woo Kim, Korea Advanced Institute of Science and Technology (South Korea)
Si-Hyeung Lee, Samsung Electronics Co., Ltd. (South Korea)
Sang-Jun Choi, Samsung Electronics Co., Ltd. (South Korea)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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