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Proceedings Paper

Microswelling-free negative resists for ArF excimer laser lithography utilizing acid-catalyzed intramolecular esterification
Author(s): Takashi Hattori; Yuko Tsuchiya; Yoshiyuki Yokoyama; Hiroaki Oizumi; Taku Morisawa; Atsuko Yamaguchi; Hiroshi Shiraishi
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Paper Abstract

We have examined alicyclic polymers with a (gamma) -hydroxy acid structure in order to investigate the properties of (gamma) -hydroxy acid and (gamma) -lactone as function groups of ArF negative resist materials. From the viewpoint of transparency and dry-etching resistance, (gamma) -hydroxy acid and (gamma) -lactone structure were found to be suitable for ArF negative resists materials. Surprisingly, the reactivity of the acid-catalyzed reaction of (gamma) -hydroxy acid is affected by the polymer structure. Using ArF excimer laser stepper, 0.20-micrometers line-and-space patterns without micro-swelling distortion were obtained from a negative resist consisting of alicyclic polymer with the (gamma) - hydroxy acid structure and a photoacid generator. Distortion was avoided because the number of carboxyl groups decreased drastically in the exposed area by the acid-catalyzed intramolecular esterification of (gamma) -hydroxy acid to (gamma) -lactone. As a result, (gamma) -hydroxy acid and (gamma) -lactone structure were found to be suitable function groups for ArF negative resist materials.

Paper Details

Date Published: 11 June 1999
PDF: 9 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350223
Show Author Affiliations
Takashi Hattori, Hitachi, Ltd. (Japan)
Yuko Tsuchiya, Hitachi, Ltd. (Japan)
Yoshiyuki Yokoyama, Hitachi, Ltd. (Japan)
Hiroaki Oizumi, Hitachi, Ltd. (Japan)
Taku Morisawa, Hitachi, Ltd. (Japan)
Atsuko Yamaguchi, Hitachi, Ltd. (Japan)
Hiroshi Shiraishi, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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