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Proceedings Paper

Considerations for the use of application-specific photoresists
Author(s): John L. Sturtevant; Benjamin C. P. Ho; Kevin D. Lucas; John S. Petersen; Chris A. Mack; Edward W. Charrier; William C. Peterson; Nobu Koshiba; Gregg A. Barnes
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Paper Abstract

In recent years, photoresists suppliers have migrated to offering a full palette of resist chemistries and processes which are specifically tailored for particular pattern types and/or exposure processes. Thus we now see designations such as 'contact resists', 'isolated line resists', 'dense line resists', 'attenuated phase shift resist', etc. This specialization offers the lithographer more choices for continual performance improvement and optimization, but implementation of multiple resist platforms in manufacturing can be problematic. In this paper, we examine the design criteria and efficacy of pattern- and application-specific photoresist versus a generic 'multi-purpose' material, and identify some of the trade-offs which can be expected when employing these resists. Generalized ideal resist behaviors are presented for different pattern criteria, including proximity bias. Both experimental and simulation results are given.

Paper Details

Date Published: 11 June 1999
PDF: 9 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350217
Show Author Affiliations
John L. Sturtevant, Motorola (United States)
Benjamin C. P. Ho, Motorola (United States)
Kevin D. Lucas, Motorola (Belgium)
John S. Petersen, Petersen Advanced Lithography (United States)
Chris A. Mack, FINLE Technologies, Inc. (United States)
Edward W. Charrier, FINLE Technologies, Inc. (United States)
William C. Peterson, JSR Microelectronics, Inc. (Belgium)
Nobu Koshiba, JSR Microelectronics, Inc. (United States)
Gregg A. Barnes, JSR Microelectronics, Inc. (United States)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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