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Proceedings Paper

Correlations between dissolution data and lithography of various resists
Author(s): Ronald DellaGuardia; Wu-Song Huang; K. Rex Chen; Doris Kang
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Paper Abstract

The fundamental basis of resist performance in semiconductor lithography is the creation of a dissolution gradient in the resist film. For positive resists the dissolution rate (DR) and dissolution characteristics of the exposed as well as unexposed regions are important factors in determining the performance of the resist. Since the establishment of the dissolution rate curve as a method for evaluating photographic materials, many investigators have tried to correlate dissolution rate data with lithographic performance in a systematic way.

Paper Details

Date Published: 11 June 1999
PDF: 13 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350215
Show Author Affiliations
Ronald DellaGuardia, IBM Microelectronics Div. (United States)
Wu-Song Huang, IBM Microelectronics Div. (United States)
K. Rex Chen, IBM Microelectronics Div. (United States)
Doris Kang, Shipley Co. Inc. (United States)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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