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Proceedings Paper

Physical modeling of deprotection-induced thickness loss
Author(s): Nickhil H. Jakatdar; Junwei Bao; Costas J. Spanos; Ramkumar Subramanian; Bharath Rangarajan
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Paper Abstract

High activation energy, chemically amplified resist systems exhibit a 4 percent to 15 percent volume shrinkage during the post-=exposure bake process. Current lithography process simulators do not take this volume shrinkage into account, thus violating the continuity equations used to model the process. This work aims at describing the kinetics of the post-exposure bake process by tracking the volume shrinkage observed in high activation resists. A dynamic model is derived and corroborated with experimental results for Shipley UV5. A global simulation technique is then used in conjunction with the models to extract the lithography parameters for these resists.

Paper Details

Date Published: 11 June 1999
PDF: 8 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350210
Show Author Affiliations
Nickhil H. Jakatdar, Univ. of California/Berkeley (United States)
Junwei Bao, Univ. of California/Berkeley (United States)
Costas J. Spanos, Univ. of California/Berkeley (United States)
Ramkumar Subramanian, Advanced Micro Devices, Inc. (United States)
Bharath Rangarajan, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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