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Proceedings Paper

Resist outgassing as a function of differing photoadditives
Author(s): Francis M. Houlihan; Ilya L. Rushkin; Richard S. Hutton; Allen G. Timko; Omkaram Nalamasu; Elsa Reichmanis; Allen H. Gabor; Arturo N. Medina; Sanjay Malik; M. Neiser; Roderick R. Kunz; Deanna K. Downs
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Paper Abstract

The effect of different photoadditives in high and low activation energy resist resins on resist outgassing during lithographic exposure was studied by quartz microbalance and gas chromatography/mass spectroscopy techniques. The resist outgassing was analyzed both qualitatively and quantitatively and structure-property relationships were developed between resist outgassing and the molecular structure of photoacid generators and additives. The photoadditives examined include, aryl iodonium perfluoroalkylsulfonates, triarylsulfonium perfluoroakylsulfonates, photogenerators of sulfamic acids, 2-nitrobenzyl PAG's and doxyl derivatives.

Paper Details

Date Published: 11 June 1999
PDF: 11 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350209
Show Author Affiliations
Francis M. Houlihan, Lucent Technologies/Bell Labs. (United States)
Ilya L. Rushkin, Lucent Technologies/Bell Labs. (United States)
Richard S. Hutton, Lucent Technologies/Bell Labs. (United States)
Allen G. Timko, Lucent Technologies/Bell Labs. (United States)
Omkaram Nalamasu, Lucent Technologies/Bell Labs. (United States)
Elsa Reichmanis, Lucent Technologies/Bell Labs. (United States)
Allen H. Gabor, Arch Chemicals, Inc. (United States)
Arturo N. Medina, Arch Chemicals, Inc. (United States)
Sanjay Malik, Arch Chemicals, Inc. (United States)
M. Neiser, Arch Chemicals, Inc. (United States)
Roderick R. Kunz, MIT Lincoln Lab. (United States)
Deanna K. Downs, MIT Lincoln Lab. (United States)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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