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Proceedings Paper

Novel silicon-containing resists for EUV and 193-nm lithography
Author(s): Carl R. Kessel; Larry D. Boardman; Steven J. Rhyner; Jonathan L. Cobb; Craig C. Henderson; Veena Rao; Uzodinma Okoroanyanwu
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Paper Abstract

Two families of polymers have been prepared and evaluated as silicon-containing bilayer resist candidates at both 193 nm and 13.4 nm (EUV). Both families of polymers are based on a tertiary ester protecting group in which the ester group contains a silicon cluster. The PRB family of polymers are random methacrylate copolymers and the PRC family are alternating maleic anhydride/norbornene polymers. The PRB family shows good resolution and sensitivity at both 193 nm and EUV, but suffers from adhesion failure between the imaging layer and the underlayer. The PRC polymers show good adhesion to underlayers and can print features at <EQ 0.12 micrometers at 193 nm and <EQ 0.10 micrometers at 13.4 nm.

Paper Details

Date Published: 11 June 1999
PDF: 7 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350204
Show Author Affiliations
Carl R. Kessel, 3M Co. (United States)
Larry D. Boardman, 3M Co. (United States)
Steven J. Rhyner, 3M Co. (United States)
Jonathan L. Cobb, Motorola (United States)
Craig C. Henderson, Sandia National Labs. (United States)
Veena Rao, Intel Corp. (United States)
Uzodinma Okoroanyanwu, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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