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Proceedings Paper

Application of polysilanes for deep-UV antireflective coating
Author(s): Yasunobu Onishi; Yasuhiko Sato; Eishi Shiobara; Seiro Miyoshi; Hideto Matsuyama; Junko Abe; Hideo Ichinose; Tokuhisa Ohiwa; Yoshihiko Nakano; Sawako Yoshikawa; Shuzi Hayase
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Paper Abstract

Application of polysilanes for a deep UV (DUV) bottom anti- reflective coating (BARC), in order to resolve the problem posed by the insufficient anti-reflection with thin conventional organic BARC applied on transparent dielectric film, is described. The newly developed polysilane anti- reflective coating has the real part of refractive index, n equals 2.00, and the imaginary part, k equals 0.23 at 248 nm. The polysilane coating is immiscible with a chemically amplified photoresist, and is not removable during normal wet development of photoresist. Etching rate of the polysilane is 2 times faster than that of DUV resist during BARC etching, and lower than that of DUV resist during dielectric film etching. The polysilane layer is easily removed by ashing using O2 gas process. Using thick polysilane coating, it can realize both the suppression of the interface reflection between the resist and BARC and good critical dimension control on dielectric film.

Paper Details

Date Published: 11 June 1999
PDF: 8 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350203
Show Author Affiliations
Yasunobu Onishi, Toshiba Corp. (Japan)
Yasuhiko Sato, Toshiba Corp. (Japan)
Eishi Shiobara, Toshiba Corp. (Japan)
Seiro Miyoshi, Toshiba Corp. (Japan)
Hideto Matsuyama, Toshiba Corp. (Japan)
Junko Abe, Toshiba Corp. (Japan)
Hideo Ichinose, Toshiba Corp. (Japan)
Tokuhisa Ohiwa, Toshiba Corp. (Japan)
Yoshihiko Nakano, Toshiba Corp. (Japan)
Sawako Yoshikawa, Toshiba Corp. (Japan)
Shuzi Hayase, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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