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Proceedings Paper

Aerial image contrast using interferometric lithography: effect on line-edge roughness
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Paper Abstract

Interferometric lithography affords the unique ability to independently control dose, pitch and aerial image contrast during photolithographic exposure. In this report, we describe the use of a deep-UV interferometric lithography exposure tool to study the impact of aerial image contrast on resists imaging properties. A wide range of high resolution resists materials was surveyed, including positive- and negative-tone systems, chemically amplified and conventional diazonaphthoquinone imagining chemistries, and aqueous- and solvent-developed systems. In all cases, resist line- edge roughness was observed to increase as aerial image contrast was decreased, though the precise behavior varied with resist material. Polymer molecular weight was systematically varied with resists materia. Polymer molecular weight was systematically varied in a negative- tone chemically amplified resist formulation. The results indicate that molecular weight is a significant factor influencing the magnitude and type of line-edge roughness at low aerial image contrast.

Paper Details

Date Published: 11 June 1999
PDF: 12 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350198
Show Author Affiliations
Martha I. Sanchez, IBM Almaden Research Ctr. (United States)
William D. Hinsberg, IBM Almaden Research Ctr. (United States)
Frances A. Houle, IBM Almaden Research Ctr. (United States)
John A. Hoffnagle, IBM Almaden Research Ctr. (United States)
Hiroshi Ito, IBM Almaden Research Ctr. (United States)
Cattien V. Nguyen, IBM Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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