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Proceedings Paper

Electrical property study of line-edge roughness in top surface imaging process by silylation
Author(s): Myoung-Soo Kim; Hyoung-Gi Kim; Seung Ho Pyi; Hyeong-Soo Kim; Ki-Ho Baik; Il-Hyun Choi
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Paper Abstract

We have investigated the effect of line edge roughness (LER) of active patterns used for shallow trench isolation to the electrical performance of MOS transistor applicable for 1 giga-bit DRAM. Three different processes for resist patterning were applied for comparative analysis to form the active pattern in MOS transistor; the first method applied a conventional single layer resist (SLR) process, the second TIPS with two step dry development, and the third another TIPS with three step dry development. The third process adopted an additional step to break-through thin silicon dioxide which may contribute to the LER. The LER data of an active pattern before and after nitride substrate etching and their profiles were investigated among these processes. The third method shows the almost same LER and CD uniformity of the active pattern as those of SLR. The electrical properties. Only, threshold voltage variation of MOS transistor by the second method shows the worse results than those of SLR. Considering the ratio of LER in isolated active pattern with channel width of 0.3 micrometers to its average CD value, we think that its ratio should be controlled well below 7 percent for TIPS to make an useful technology for real device. Based on these studies, we believed that the well-controlled TIPS process using three step dry development is a strong candidate for device production of ArF and EUV lithography, if the advantages of TIPS technology over the SLR process are considered in the respect of lithography.

Paper Details

Date Published: 11 June 1999
PDF: 11 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350197
Show Author Affiliations
Myoung-Soo Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Hyoung-Gi Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Seung Ho Pyi, Hyundai Electronics Industries Co., Ltd. (South Korea)
Hyeong-Soo Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Ki-Ho Baik, Hyundai Electronics Industries Co., Ltd. (United States)
Il-Hyun Choi, Hyundai Electronics Industries Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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