Share Email Print
cover

Proceedings Paper

Chemically amplified resists based on the norbornene copolymers with steroid derivatives
Author(s): Jin-Baek Kim; Bum-Wook Lee; Jae-Sung Kang; Seong-Ju Kim; Joo Hyeon Park; Dong-Chul Seo; Ki-Ho Baik; Jae Chang Jung; Chi-Hyeong Roh
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In order to develop a new series of chemically amplified photoresists for 193-nm lithography, norbornene substituted with a steroid derivative was copolymerized with maleic anhydride by free radical polymerization. The resulting polymers have excellent transmittance at 193 nm and possess good thermal stability up to 260 degrees C. The resist formulated with the polymers showed better dry-etching resistance than the conventional poly(hydroxystyrene) resist for Cl2/O2 plasma. With the standard developer, the resists from 0.15-0.20 micrometers patterns at doses of 5-18 mJ/cm2 using an ArF excimer laser stepper.

Paper Details

Date Published: 11 June 1999
PDF: 8 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350194
Show Author Affiliations
Jin-Baek Kim, Korea Advanced Institute of Science and Technology (South Korea)
Bum-Wook Lee, Korea Advanced Institute of Science and Technology (South Korea)
Jae-Sung Kang, Korea Advanced Institute of Science and Technology (South Korea)
Seong-Ju Kim, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Joo Hyeon Park, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Dong-Chul Seo, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Ki-Ho Baik, Hyundai Electronics Industries Co., Ltd. (United States)
Jae Chang Jung, Hyundai Electronics Industries Co., Ltd. (South Korea)
Chi-Hyeong Roh, Hyundai Electronics Industries Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

© SPIE. Terms of Use
Back to Top