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Proceedings Paper

ArF photoresist system: using cycloolefin-alt-maleic anhydride pericyclic acrylate terpolymers
Author(s): Sheng-Yueh Chang; Kung-Lung Cheng; Bang-Chein Ho; Jui-Fa Chang; Jian-Hong Chen; Ting-Chung Liu; Tzu-Yu Lin
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Paper Abstract

The design of photoresists for 193 nm exposure systems has received extensive attention, with variable lithograph processes based on single layer resist as well as bi-layer and top surface imaging resists already been developed. Single layer resist systems can generally be divided into two classes: alicyclic and acrylic based on the polymer backbone. In acrylic systems, etching resistance is achieved by attaching pendant groups that have low Ohnishi numbers. In alicyclic systems, the high etching resistant substituent is directly incorporated in the backbone. Excellent ArF single layer photoresists have been derived form both types of polymers in several investigations. This work report on terpolymers of maleic anhydride, t-butyl-5-norbornene-2- carboxylate and polycyclic methacrylate derivatives as a resin for ArF photoresists formulated. Using these terpolymers which have a compatible property for 2.38 wt percent TMAH developer. The effects of terpolymers, type of PAG, dissolution inhibitors, base component, baking temperature and time delay on ArF SLR are also investigated.

Paper Details

Date Published: 11 June 1999
PDF: 8 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350193
Show Author Affiliations
Sheng-Yueh Chang, Industrial Technology Research Institute (Taiwan)
Kung-Lung Cheng, Industrial Technology Research Institute (Taiwan)
Bang-Chein Ho, Industrial Technology Research Institute (Taiwan)
Jui-Fa Chang, Industrial Technology Research Institute (Taiwan)
Jian-Hong Chen, Industrial Technology Research Institute (Taiwan)
Ting-Chung Liu, Industrial Technology Research Institute (Taiwan)
Tzu-Yu Lin, Industrial Technology Research Institute (Taiwan)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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