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Proceedings Paper

DUV and e-beam chemistry of high-sensitivity positive PMMA-based resist
Author(s): A. Uhl; Juergen Bendig; Ulrich A. Jagdhold; Joachim J. Bauer
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Paper Abstract

We present an investigation to study the degradation of PMMA, poly(methyl methacrylate), and ARP-610, poly(methyl methacrylate-co-methacrylic acid), during e-beam and DUV exposure. The change in the chemical structure of the polymer materials were analyzed using UV, IR, NMR spectroscopy, gel permeation chromatography and GC-MS. The formation of anhydrides within the isotactic parts of the co-polymer causes a bimodel and multimodal distribution of the fragments and, therefore, a more efficient dissolution process.

Paper Details

Date Published: 11 June 1999
PDF: 7 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350192
Show Author Affiliations
A. Uhl, Humboldt Univ. of Berlin and Institute for Semiconductor Physics (Germany)
Juergen Bendig, Humboldt Univ. of Berlin (Germany)
Ulrich A. Jagdhold, Institute for Semiconductor Physics (Germany)
Joachim J. Bauer, Institute for Semiconductor Physics (Germany)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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