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Proceedings Paper

Antireflective coating strategies for 193-nm lithography
Author(s): Alan Stephen; Kim R. Dean; Jeff D. Byers
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Paper Abstract

The need for antireflective layers for good lithographic performance is a necessity for 193 nm wavelength exposures. In this paper we will illustrate two solutions for reflectivity control. The first is a spin-on organic bottom antireflectivity coating optimized for 193nm resist and the other is an inorganic film, SiOxNy.

Paper Details

Date Published: 11 June 1999
PDF: 8 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350184
Show Author Affiliations
Alan Stephen, Advanced Micro Devices, Inc. and International SEMATECH (United States)
Kim R. Dean, International SEMATECH (United States)
Jeff D. Byers, International SEMATECH (United States)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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