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Proceedings Paper

Improved resolution with advanced negative DUV photoresist with 0.26N capability
Author(s): Gregory P. Prokopowicz; Jacque H. Georger Jr.; Eyad Ayyash; James W. Thackeray; William R. Brunsvold; Laura L. Kosbar; Ali Afzali-Kushaa; Jeffrey D. Gelorme
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Paper Abstract

While positive photo resists make up the majority of the DUV market, negative resists have gained acceptance in IC manufacturing. Typically, negative photo resists can be used for a wide variety of feature types with minimal print bias including posts, lines/spaces and isolated lines. In some instances, negative resist are being investigated to print trenches and contact holes. Although negative resists are promising, there has been one issue. Dense line resolution has been limited by the onset of microbridging. Currently, minimum resolution for equal lines and spaces is about 200 nm with 0.26N developer, using conventional illumination. Recent developments in negative DUV resist technology have eliminated microbridging in 0.26N developer and has resulted in a significant increase in resolution. In addition to resolution and overall lithographic performance for sub 200 nm features, the PEB sensitivity, PED stability and other key resist performance capabilities will be demonstrated.

Paper Details

Date Published: 11 June 1999
PDF: 12 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350181
Show Author Affiliations
Gregory P. Prokopowicz, Shipley Co. Inc. (United States)
Jacque H. Georger Jr., Shipley Co. Inc. (United States)
Eyad Ayyash, Shipley Co. Inc. (United States)
James W. Thackeray, Shipley Co. Inc. (United States)
William R. Brunsvold, IBM Microelectronics Div. (United States)
Laura L. Kosbar, IBM Thomas J. Watson Research Ctr. (United States)
Ali Afzali-Kushaa, IBM Thomas J. Watson Research Ctr. (Iran)
Jeffrey D. Gelorme, IBM Thomas J. Watson Research Ctr. (United States)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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