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Proceedings Paper

Optical lithography simulation and photoresist optimization for photomask fabrication
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Paper Abstract

The demand for smaller and more uniform features on photomasks is rapidly increasing. The complexity of these patterns is also increasing with the need for optical proximity correction and phase shifting structures. These complex mask features demand unprecedented accuracy in pattern placement and dimensional control. We have conducted research designed to optimize the process for laser pattern generation by improving resolution and process latitude. Lithographic simulation was utilized for process optimization because of the very high cost of mask patterning and metrology experiments.

Paper Details

Date Published: 11 June 1999
PDF: 12 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350173
Show Author Affiliations
Benjamen M. Rathsack, Univ. of Texas at Austin (United States)
Cyrus Emil Tabery, Univ. of Texas at Austin (United States)
Steven A. Scheer, Univ. of Texas at Austin (United States)
Mike Pochkowski, Etec Systems, Inc. (United States)
Cecilia E. Philbin, DuPont Photomasks, Inc. (United States)
Franklin D. Kalk, DuPont Photomasks, Inc. (United States)
Clifford L. Henderson, Georgia Institute of Technology (United States)
Peter D. Buck, DuPont Photomasks, Inc. (United States)
C. Grant Willson, Univ. of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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