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Proceedings Paper

Reactive ion etch studies of DUV resists
Author(s): Ranee W. Kwong; Wayne M. Moreau; Wendy Yan
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Paper Abstract

The morphology and degradation of the polymeric DUV resist of polyhydroxystyrene/t-butyl acrylate copolymers after CF4/O2/Ar/CHF3 reactive ion etching (RIE) was studied. The surface pitting in the area of 10 nm with spikes as large as 85 nm were found. DUV resists with higher t-butylacrylate content in the main chain were susceptible to main chain scission and surface pitting. The entrapment of volatile fragments by the deposited amorphous fluorocarbon polymer during the RIE process leads to surface distortions. Pre-hardening of the resist by electron beam reduces the surface pitting by two fold. Negative resist based on polyhydroxystyrene homopolymer with minimum volatile produced very smooth films with a tenfold reduction in roughness factor. The future design of positive resist should include the RIE performance factor of minimal outgassing and minimum sidewall surface roughness.

Paper Details

Date Published: 11 June 1999
PDF: 6 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350172
Show Author Affiliations
Ranee W. Kwong, IBM Microelectronics Div. (United States)
Wayne M. Moreau, IBM Microelectronics Div. (United States)
Wendy Yan, IBM Microelectronics Div. (United States)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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