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Proceedings Paper

Evaluation of electron beam stabilization for ion implant processing
Author(s): Stephen Jack Buffat; Bee Kickel; B. Philipps; J. Adams; Matthew F. Ross; Jason P. Minter; Trey Marlowe; Selmer S. Wong
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Paper Abstract

With the integration of high energy ion implant processes into volume CMOS manufacturing, the need for thick resist stabilization to achieve a stable ion implant process is critical. With new photoresist characteristics, new implant end station characteristics arise. The resist outgassing needs to be addressed as well as the implant profile to ensure that the dosage is correct and the implant angle does not interfere with other underlying features. This study compares conventional deep-UV/thermal with electron beam stabilization. The electron beam system used in this study utilizes a flood electron source and is a non-thermal process. These stabilization techniques are applied to a MeV ion implant process in a CMOS production process flow.

Paper Details

Date Published: 11 June 1999
PDF: 18 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350167
Show Author Affiliations
Stephen Jack Buffat, ZiLOG (United States)
Bee Kickel, ZiLOG (United States)
B. Philipps, ZiLOG (United States)
J. Adams, ZiLOG (United States)
Matthew F. Ross, AlliedSignal Inc. (United States)
Jason P. Minter, AlliedSignal Inc. (United States)
Trey Marlowe, AlliedSignal Inc. (United States)
Selmer S. Wong, AlliedSignal Inc. (United States)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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