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Proceedings Paper

Benzyloxypropene-protected PHS resist system for e-beam applications
Author(s): Wu-Song Huang; Ranee W. Kwong; Wayne M. Moreau; Mark Chace; Kim Y. Lee; C. K. Hu; David R. Medeiros; Marie Angelopoulos
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Paper Abstract

E-beam lithography has recently emerged as a critical technology for the future semiconductor industry in the aspects of mask making, direct write and projection printing. Complexities in phase shifted and optical proximity corrected mask fabrications require high resolution, thermal bake insensitivity and RIE etch resistance. Direct write and projection also need high speed to address the throughput issue. These stringent requirements have rendered chemically amplified resists the strong candidates for the next generation E-beam lithography. Previously, we reported on a methoxypropene protected polyhydroxystyrene (PHS) system as a high performance chemically amplified E-beam resist. This system required weak aqueous base developer and was more sensitive to high temperature bake. The need for higher thermal stability to endure high temperature device fabrication process has prompted us to investigate other protecting groups. Benzyloxypropene protected PHS resist system was one of the earliest systems investigated. 100nm Cu lines fabricated with this resist formation through metallization, Damascence and lift off process have been demonstrated. In this paper, we will discuss the chemistry and properties of this resist system in conjunction with its E-beam lithography and metallization application.

Paper Details

Date Published: 11 June 1999
PDF: 10 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350156
Show Author Affiliations
Wu-Song Huang, IBM Microelectronics Div. (United States)
Ranee W. Kwong, IBM Microelectronics Div. (United States)
Wayne M. Moreau, IBM Microelectronics Div. (United States)
Mark Chace, IBM Microelectronics Div. (United States)
Kim Y. Lee, Etec Systems, Inc. (United States)
C. K. Hu, IBM Thomas J. Watson Research Ctr. (United States)
David R. Medeiros, IBM Thomas J. Watson Research Ctr. (United States)
Marie Angelopoulos, IBM Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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