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Proceedings Paper

Polymeric base additives for lithographic improvement in DUV resist system
Author(s): Wu-Song Huang
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Paper Abstract

Recently, base additives have become indispensable ingredients in high resolution chemically amplified resists. These bases act as acid scavengers to extend shelf life for low activation systems such as ketal and acetal protected polyhydroxystyrene type rest. They are also used to improve contamination resistance for high activation resist system such as TBOC and t-butyl ester containing resins. Studies have also shown that base additives can reduce linewidth slimming and PEB sensitivity for acetal systems. Actually, one of the most important benefits of base additives is to limit acid diffusion and enhance chemical contrast during exposure and bake process, hence improving resolution and process latitudes. In this paper, we show that polymeric bases provide better litho performance than small compounds. In addition, hydroxides are found to be better than carboxylate salts and amines.

Paper Details

Date Published: 11 June 1999
PDF: 12 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350154
Show Author Affiliations
Wu-Song Huang, IBM Microelectronics Div. (United States)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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