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Proceedings Paper

Second-generation 193-nm bilayer resist
Author(s): Patrick Foster; Thomas Steinhaeusler; John J. Biafore; Gregory D. Spaziano; Sydney G. Slater; Andrew J. Blakeney
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Paper Abstract

We have recently developed a bilayer resist system based on a methacrylic silicon-containing imageable layer and a UV curable copolymer undercoat which has exhibited 0.13 micrometers resolution for dense features and 0.12 micrometers resolution for isolated features after substrate etch. In this paper, we will discuss recent advancements in the design of the second generation bilayer resist. In particular, we will discuss the development of two new thermally curable undercoats for use in both 193 nm and 248 nm applications. The optical properties of these new materials have been optimized to reduce reflectivity at the desired wavelength.

Paper Details

Date Published: 11 June 1999
PDF: 6 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350153
Show Author Affiliations
Patrick Foster, Arch Chemicals, Inc. (United States)
Thomas Steinhaeusler, Arch Chemicals, Inc. (United States)
John J. Biafore, Arch Chemicals, Inc. (United States)
Gregory D. Spaziano, Arch Chemicals, Inc. (United States)
Sydney G. Slater, Arch Chemicals, Inc. (United States)
Andrew J. Blakeney, Arch Chemicals, Inc. (United States)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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