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Proceedings Paper

Top antireflective coating process for deep-UV lithography
Author(s): Allen C. Fung; Binder K. Mann; Ronald J. Eakin; Pierre Silvestre; Brad Williams; Jason Miyake; Yusuke Takano
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Paper Abstract

This paper will evaluate the potential improvements with the addition of an aqueous based top antireflective coating to a Deep-UV process. This antireflective coating (ARC) is resistant to intermixing with the resists and is removed during the normal develop operation. A logic IC with 0.15- 0.18 micrometers design rules will be the primary test vehicle, concentrating on Contact/VIA levels. Performance will be compare with and without the top ARC. Uniformity of measured critical dimensions (CD) will be compared. CD/dose swing curve suppression, as a function of substrate and resist thickness, will be documented. The Deep-UV resist/top ARC application will be optimized, as well, to maximize throughput.

Paper Details

Date Published: 11 June 1999
PDF: 11 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350147
Show Author Affiliations
Allen C. Fung, National Semiconductor Corp. (United States)
Binder K. Mann, National Semiconductor Corp. (United States)
Ronald J. Eakin, Clariant Corp. (United States)
Pierre Silvestre, Clariant Corp. (United States)
Brad Williams, Clariant Corp. (United States)
Jason Miyake, Clariant Corp. (United States)
Yusuke Takano, Clariant (Japan) K.K. (Japan)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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