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Proceedings Paper

Optimization of 300-mm coat, exposure, and develop processes for 180-nm and smaller features
Author(s): Walter H. Swanson; John S. Petersen; Wang Pen Mo; Joseph A. Heck
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Paper Abstract

To meet the technology needs at their insertion into integrated circuit manufacturing, the testing and development processes of 300 mm wafer compatible tools require imaging of 180 nm and smaller features. In response to this need, processes employing commercially available chemicals intended for use on 200 mm substrates and capable of producing 180 nm and smaller features were developed. Said processes were later used for examining critical dimension control on 300 mm wafers. The methods and the experimental designs used to optimize 300 mm coat, exposure, and develop processes for two positive acting, chemically amplified resist systems are described. A low activation energy resist, PEG-11A3, and a high activation energy resists, UV6, were coated on top of DUV42-6 anti-reflection layer. Results show both resist capable of 140 nm equal line and space processing layer. Results show both resists capable of 140 nm equal line and space processing with process window size limited only by phase errors of the alternating phase-shift mask that induce image placement problems.

Paper Details

Date Published: 11 June 1999
PDF: 20 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350146
Show Author Affiliations
Walter H. Swanson, Tokyo Electron America, Inc. (United States)
John S. Petersen, Petersen Advanced Lithography (United States)
Wang Pen Mo, SEMATECH and Taiwan Semiconductor Manufacturing Co. (United States)
Joseph A. Heck, SEMATECH and Intel Corp. (United States)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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