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Proceedings Paper

Block copolymers as additives: a route to enhanced resist performance
Author(s): Narayan Sundararajan; Kenji Ogino; Suresh Valiyaveettil; Jianguo Wang; Shu Yang; Atsushi Kameyama; Christopher Kemper Ober; Robert D. Allen; Jeff D. Byers
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Paper Abstract

The role of block copolymers as additives for improving resist performance in the area of 193 nm lithography is investigated in this study. We have demonstrated that specifically designed block copolymers when tailored to resist matrices to which they are added can profoundly enhance resist imaging performance. This improvement can be attributed to the ability of the block copolymers to modify surface and interfaces and to control photoacid generator distribution within the resist film. Ion beam techniques such as Rutherford Backscattering and Forward Recoil Spectrometry, used to analyze the distribution and segregation behavior of the photoacid generators and block copolymer additives, will also be described.

Paper Details

Date Published: 11 June 1999
PDF: 8 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350144
Show Author Affiliations
Narayan Sundararajan, Cornell Univ. (United States)
Kenji Ogino, Cornell Univ. (United States)
Suresh Valiyaveettil, Cornell Univ. (United States)
Jianguo Wang, Cornell Univ. (United States)
Shu Yang, Cornell Univ. (United States)
Atsushi Kameyama, Cornell Univ. (Japan)
Christopher Kemper Ober, Cornell Univ. (United States)
Robert D. Allen, IBM Almaden Research Ctr. (United States)
Jeff D. Byers, International SEMATECH (United States)


Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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