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Proceedings Paper

Correlation of carrier lifetimes and arsenic-antisite defects in LT-GaAs grown at different substrate temperatures
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Paper Abstract

Subpicosecond carrier lifetimes of arsenic-rich GaAs grown by molecular beam epitaxy at low substrate temperatures have been determined by time-resolved reflectivity. Effect of growth temperature on change of transient reflectivity and antisite defect concentration were also demonstrated. For the first time carrier lifetime as short as 0.13 ps was observed (resolution limited).

Paper Details

Date Published: 24 May 1999
PDF: 7 pages
Proc. SPIE 3624, Ultrafast Phenomena in Semiconductors III, (24 May 1999); doi: 10.1117/12.349311
Show Author Affiliations
Gong-Ru Lin, Tatung Institute of Technology (Taiwan)
Tze-An Liu, National Chiao Tung Univ. (Taiwan)
Ci-Ling Pan, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 3624:
Ultrafast Phenomena in Semiconductors III
Kong-Thon F. Tsen, Editor(s)

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