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Proceedings Paper

Time-resolved photoluminescence studies of GaN, InGaN, and AlGaN grown by metalorganic chemical vapor deposition
Author(s): Yong-Hoon Cho; Gordon Hall Gainer; Jin-Joo Song; Sarah L. Keller; Umesh K. Mishra; Steven P. DenBaars; Wei Yang; Scott A. McPherson
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Paper Abstract

Time-resolved photoluminescence (PL) measurements are reported for GaN, InGaN, and AlGaN thin films, as well as InGaN/GaN multiple quantum wells (MQWs) with 3-nm-thick InGaN wells and 4.5-nm-thick GaN barriers. All the samples were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition. We observed that the carrier recombination lifetime of the ternary InGaN and AlGaN alloys becomes longer with decreasing emission energy. An anomalous temperature-dependent emission behavior was observed for InGaN-related PL with increasing temperature. The actual temperature dependence of the PL emission was estimated with respect to the bandgap energy determined by photoreflectance spectra. The temperature-induced S-shaped PL shift is explained by a change in the carrier dynamics with increasing temperature due to inhomogeneity and carrier localization in the alloys. We also investigated the influence of Si doping on the optical characteristics of InGaN/GaN MQWs. The 10 K radiative recombination lifetime was observed to decrease from approximately 30 ns to approximately 4 ns with increasing Si doping concentration from < 1 X 1017 to 3 X 1019 cm-3. A reduced Stokes shift between PL and PL excitation spectra, a reduction in a pump-density-induced blueshift, and an increase in the interface quality with increasing Si doping were observed. From these results, we conclude that Si doping results in a decrease in carrier localization caused by potential fluctuations in the MQWs.

Paper Details

Date Published: 24 May 1999
PDF: 8 pages
Proc. SPIE 3624, Ultrafast Phenomena in Semiconductors III, (24 May 1999); doi: 10.1117/12.349308
Show Author Affiliations
Yong-Hoon Cho, Oklahoma State Univ. (United States)
Gordon Hall Gainer, Oklahoma State Univ. (United States)
Jin-Joo Song, Oklahoma State Univ. (United States)
Sarah L. Keller, Univ. of California/Santa Barbara (United States)
Umesh K. Mishra, Univ. of California/Santa Barbara (United States)
Steven P. DenBaars, Univ. of California/Santa Barbara (United States)
Wei Yang, Honeywell Technology Ctr. (United States)
Scott A. McPherson, Honeywell Technology Ctr. (United States)


Published in SPIE Proceedings Vol. 3624:
Ultrafast Phenomena in Semiconductors III
Kong-Thon F. Tsen, Editor(s)

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