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Proceedings Paper

Experimental observation of multiple excitonic optical Rabi oscillations in a semiconductor
Author(s): Michael E. Donovan; Alex Schuelzgen; Kai Wundke; Rolf H. Binder; Johan Markus Lindberg; Hyatt M. Gibbs; Galina Khitrova; Nasser Peyghambarian
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Paper Abstract

Data are presented which show eight excitonic density (Rabi) oscillations in an In0.1Ga0.9As/GaAs multiple quantum well at 5 K. Our time resolved, two-color pump-probe experimental technique for observing these oscillations is described. The quantum well sample geometry and linear spectrum are shown along with data characterizing the pump and probe pulses. Experimental data is shown to be in excellent agreement with our theoretical calculation of exciton density versus time, verifying the important affect of the Coulomb interaction between carriers in renormalizing the Rabi frequency. The theoretical calculations include the two-fold degenerate light-hole, heavy-hole, and valence bands in the Hartree-Fock form of the semiconductor Block equations, with all variables selected to conform to the experiment.

Paper Details

Date Published: 24 May 1999
PDF: 8 pages
Proc. SPIE 3624, Ultrafast Phenomena in Semiconductors III, (24 May 1999); doi: 10.1117/12.349298
Show Author Affiliations
Michael E. Donovan, Optical Sciences Ctr./Univ. of Arizona (United States)
Alex Schuelzgen, Optical Sciences Ctr./Univ. of Arizona (United States)
Kai Wundke, Optical Sciences Ctr./Univ. of Arizona (United States)
Rolf H. Binder, Optical Sciences Ctr./Univ. of Arizona (United States)
Johan Markus Lindberg, Institutionen foer Fysik (Finland)
Hyatt M. Gibbs, Optical Sciences Ctr./Univ. of Arizona (United States)
Galina Khitrova, Optical Sciences Ctr./Univ. of Arizona (United States)
Nasser Peyghambarian, Optical Sciences Ctr./Univ. of Arizona (United States)


Published in SPIE Proceedings Vol. 3624:
Ultrafast Phenomena in Semiconductors III
Kong-Thon F. Tsen, Editor(s)

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